基本資料：

  • 姓名：林烱暐
  • Email：lincw@ttu.edu.tw
  • 單位系所/職稱：
  • 光電工程研究所 教授
  • 電機工程學系 教授
  • 材料工程學系 教授
  • 電機工程學系 教授

期刊論文：

  • 1. Chiung-Wei Lin, Bing-Ying Zhong(2025). Effect of Oxygen-Modification on the Switching of ZnO TFT. Japanese Journal of Applied Physics, 64(9), 09SP21. SCIE(SCI)
  • 2. Chiung-Wei Lin, Jin-Wei Huang, Jia-Chang Ho(2021). Low-temperature Hf-silicate prepared with various thermal budgets. Japanese Journal of Applied Physics, 60(1), SAAB09. SCIE(SCI)
  • 3. Chiung-Wei Lin, Cheng-Hung Shen, Bing-Ying Zhong(2020). Improving p-type mcro-oxidized ZnN film by efficient thermal treatment. Japanese Journal of Applied Physics, 59(2), SAAC02. SCIE(SCI)
  • 4. Chiung-Wei Lin, Bo-Cheng Liu(2019). Preparing p-type ZnO by micro-oxidation of PVD-ZnN. Jpn. J. Appl. Phys., 58(2), SAAF02. SSCI
  • 5. Chiung-Wei Lin, Wei-Chieh Chung, Zhao-De Zhang, Ming-Chih Hsu(2018). P-channel transparent thin-film transistor using physical-vapor-deposited NiO layer. Japanese Journal of Applied Physics, 57(1), 01AE01. SCIE(SCI)
  • 6. Chiung-Wei Lin, Jia-Wei Wang(2017). Reducing the reflection of nanowhiskers on dielectric composite pyramids. Japanese Journal of Applied Physics, 56, 06GG0. SCIE(SCI)
  • 7. Chiung-Wei Lin, Bor-Chang Liu(2017). Effect of N2 flow during deposition on p-type ZnO film. Japanese Journal of Applied Physics, 56(1), 01AB03. SCIE(SCI)
  • 8. Chiung-Wei Lin, Bo-Shen Zheng, Jing-Wei Huang(2016). Formation of hybrid hafnium oxide by applying sacrificial silicon film. Japanese Journal of Applied Physics, 55, 01AA10. SCIE(SCI)
  • 9. Chiung-Wei Lin, Yue-Pu Song, Shih-Chieh Chang(2015). Rapid thermal oxidation of zinc nitride film. Jpn. J. Appl. Phys., 54(4), 04DH06. SCIE(SCI)
  • 10. C. W. Lin, Y. T. Chiang(2014). Tetragonal hafnium oxide film prepared by low-temperature oxidation. Jpn. J. Appl. Phys., 53(11), 11RA07. SCIE(SCI)
  • 11. Chiung-Wei Lin, Po-Chi Ho, Shi-Jay Chang, Wen-Wei Chen(2014). Nitridation of zinc oxide film by pulse mode rapid thermal annealing. Jpn. J. Appl. Phys., 53, 04EH06. SCIE(SCI)
  • 12. Chiung-Wei Lin, Yao-Ting Tsai(2014). Improved Carrier Extraction of Solar Cell Using Transparent Current Spreading Layer. Thin Solid Films, 570, 475-478. SCIE(SCI)
  • 13. Chiung-Wei Lin, Shih-Hao Yang, Cheng-Yen Li(2013). Ionic Nucleated Crystallized Silicon Thin-Film Transistor Fabricated at 130 oC. Thin Solid Films, 544, 457-460. SCIE(SCI)
  • 14. Chiung-Wei Lin, Tao-Chang Tsai, Yi-Liang Chen(2013). Improved microcrystalline silicon and gate insulator interface with a pad/buffer structure. Thi Solid Films, 529, 398-401. SCIE(SCI)
  • 15. Chiung Wei Lin, Yi Liang Chen(2012). Reducing the effects of mismatch between zinc oxide and silicon by silane plasma modification. J Mater Sci: Mater Electron, 23(9), 1621. SCIE(SCI)
  • 16. Chiung-Wei Lin, Cheng-Chieh Juan(2012). Less Reflective Sub-Wavelength Structure Formed on Textured Surface Using Nanosphere Mask. Japanese Journal of Applied Physics, 52, 01AD03. SCIE(SCI)
  • 17. Chiung-Wei Lin, Cheng-Yen Li(2012). Fast Deposition of Low Temperature Crystallized Silicon Films by Hybrid Nucleation. Jpn. J. Appl. Phys., 51(8), 08HF02. SCIE(SCI)
  • 18. Chiung-Wei Lin, Ming-Hsien Yang, Yeong-Shyang Lee(2012). Plasma Nitridation of Hydrogenated Silicon Nitride Film. Japanese Journal of Applied Physics, 51, 01AJ09. SCIE(SCI)
  • 19. C. W. Lin, S. C. Lee, Y. S. Lee(2010). Crystallization of silicon films by new metal mediated mechanism. J. Material & Science: Materials in Electronics, 21(3), 270. SCIE(SCI)
  • 20. Chiung Wei Lin, Yi Liang Chen, Yeong Shyang Lee(2009). Micro-porous silicon structure with low optical reflection. Journal of Materials Science-Materials in Electronics, 20(4), 301-304. SCIE(SCI)/EI
  • 21. Chiung-Wei Lin, Chein-Fu Teng, Yi-Liang Chen(2008). Effect of in-grain porous silicon structure on photovoltaic device. Journal of Physics and Chemistry of Solids, 69, 641–644. SCIE(SCI)/EI
  • 22. Chiung-Wei Lin, Chih-Chao Chang, Yeong-Shyang Lee, Yung-Hui Yeh(2008). High drivability mc-Si TFT device with a compound channel layer structure. Journal of Physics and Chemistry of Solids, 69, 645–647. SCIE(SCI)/EI
  • 23. Chiung-Wei LIN, Yi-Liang CHEN, Yeong-Shyang LEE, Yung-Hui YEH(2008). Highly Uniform Polycrystalline Silicon Thin Films Fabricated by Metal Plate Energy-Assisted Agent Method. Japanese Journal of Applied Physics, 47(6), 4426–4429. SCIE(SCI)
  • 24. Chiung-Wei Lin, Pao-An Chang, Yeong-Shyang Lee(2007). Germanium enhanced large-grain growth by pulse mode rapid thermal crystallization process. Journal of material science: materials in electronics, 18(5), 475-480. SCIE(SCI)/EI
  • 25. Chiung-Wei Lin, Yen-Xin Chen, Yeong-Shyang Lee, Young-Hui Yeh(2007). Effect of Self-Biased Nitrous Oxide Plasma on Plasma-Enhanced Chemical-Vapor-Deposited Silicon Oxide. Japanese Journal of Applied Physics, 46(5A), 2887–2891. SCIE(SCI)/EI
  • 26. Chiung-Wei LIN, Seng-Chi LEE, Yeong-Shyang LEE(2005). High-Efficiency Crystallization of Amorphous Silicon Films on Glass Substrate by New Metal-Mediated Mechanism. Japanese Journal of Applied Physics, 44(10), 7319-7326. SCIE(SCI)/EI
  • 27. Chun-Yen Chang, Yeong-Shyang Lee, Tiao-Yuan Huang, Po-Sheng Shih, Chiung-Wei Lin(2000). The effects of microcrystalline silicon ®lm structure on low-high-low band-gap thin film transistor. Materials Chemistry and Physics, 62, 153-157. SCIE(SCI)/EI
  • 28. C.W. Lin, C.Y. Chang(1997). A Novel Thin-Film Transistor with Vertical Offset Structure. Jpn. J. Appl. Phys., 36(4A), 2032. SCIE(SCI)/EI
  • 29. S.W. Hsieh, C.Y. Chang, Y.S. Lee, C.W. Lin, S.C. Hsu(1993). Properties of Plasma-Enhanced Chemical Vapor Deposited a-SiNx by Various Dilution Gases. J. Appl. Phys., 76, 3645. SCIE(SCI)/EI

研討會論文

  • 1. Yi-Jhen Wang, Hsin-Han Huang, Yu-Wen Lai, Chiung-Wei Lin(2025). Low Temperature Ge/Si Heterojunction by DC Sputtering. PCSI 50（頁 PSCI-WeA1-）. United States of America.
  • 2. Chiung-Wei Lin, Bing-Ying Zhong(2025). Effect of Oxygen-Modification on the Switching of ZnO TFT. EM-NANO 2025（頁 P1-07）. Japan.
  • 3. Chiung-Wei Lin, Bing-Ying Zhong(2024). Phosphorus-Nitrogen Codoped P-type Zinc Oxide with Low Thermal Budget. ISPlasma 2024（頁 05P-P2-17）. Japan.
  • 4. Chiung-Wei Lin, Hong-Li Lin(2023). Argon Assisted Crystallization of Silicon Film with Hydrogen Dilution. ISPlasma 2023（頁 08P-P4-47）. Japan.
  • 5. Chiung-Wei Lin, Jin-Wei Huang, Jia-Chang Ho(2020). Low Temperature Hf-silicate Prepared with Various Thermal Budgets. ISPlasma2020/IC-PLANTS2020（頁 250）. Japan.
  • 6. Chiung-Wei Lin, Cheng-Hung Shen, Bing-Ying Zhong(2019). Improving p-type Micro-oxidized ZnN Film by Efficient Thermal Treatment. Int. Proc. ISPlasma（頁 18P1-35）. Japan.
  • 7. Chiung-Wei Lin(2018). Preparing p-type ZnO by Micro-oxidation of PVD-ZnN. Int. Proc. ISPlasma2018（頁 05P13）. Japan.
  • 8. Chiung-Wei Lin, Wei-Chieh Chung, Jing-Wei Huang(2017). NiO thin-film transistor with tetragonal HfO2 gate insulator. Int. Proc. DPS 2017（頁 41）. R.O.C.
  • 9. Chiung-Wei Lin(2017). Low temperature tetragonal hafnium oxide films. Int. Proc. TACT（頁 C-P-0156）. R.O.C.
  • 10. Chiung-Wei Lin, Wei-Ming Su(2017). Recovering Photocurrent by a Conducting Window Layer. Int. Proc. EDMS（頁 PD-2）. R.O.C.
  • 11. Chiung-Wei Lin, Wei-Chieh Chung, Zhao-De Zhang, Ming-Chih Hsu(2017). P-channel transparent thin-film transistor using PVD-NiO layer. Int. Proc. ISPlasma,（頁 04P33）. Japan.
  • 12. Chiung-Wei Lin, Jia-Wei Wang(2016). Fabrication of Less Reflective Nanowhisker on Textured Substrates. Int. Proc. MNC 2016（頁 10P-7-36）. Japan.
  • 13. Chiung-Wei Lin, Shu-Jheng Lin(2016). Effect of Oxygen Flow on the Electrical Properties of Aluminum Zinc Oxide Transistor. Int. Proc. EDMS（頁 PA-5）. R.O.C.
  • 14. Chiung-Wei Lin, Po-Chang Liu(2016). The Influence of Nitrogen Source on p-type ZnO Film. Int. Proc. ISPlasma, Nagoya（頁 07P17）. Japan.
  • 15. Chiung-Wei Lin, Jia-Wei Wang, Wei-Jei Chiou(2015). Formation of Less Reflective Nanowhisker on Textured Composite Dielectric. Int. Proc TACT, 2015（頁 B-P-113）. R.O.C.
  • 16. Chiung-Wei Lin, Jia-Chi Chang, June Wei, Yeong-Shyang Lee(2015). Plasma Crystallization of Silicon Films. Int. Proc. EDMS, 2015（頁 244）. R.O.C.
  • 17. Chiung-Wei Lin, Bo-Sheng Zheng, Jin-Wei Huang(2015). Formation of hybrid hafnium oxide using silicon source. Int. Proc ISPlasma（頁 D3-p-03）. Japan.
  • 18. C. W. Lin, S. K. Hong(2014). Passivation of Nitrogen on Zinc Oxide Thin Film Transistor. Int. Proc. IEDMS, 2014. R.O.C.
  • 19. C. W. Lin, Y. L. Chen(2014). Micro-Hydrogenation of Nanometric Amorphous Silicon Film. Int. Proc. VASSCAA, 2014（頁 PSS-009）. R.O.C.
  • 20. Chiung-Wei Lin, Yue-Pu Song, Shih-Chieh Chang(2014). Rapid thermal oxidation of zinc nitride film. Int. Proc SSDM, 2014（頁 C-6-3）. Japan.
  • 21. C. W. Lin, Y. C. Chiang(2014). Tetragonal Hafnium Oxide Film Prepared by Low Temperature Oxidation. ISPlasma 2014（頁 05pP06）. Japan.
  • 22. Chiung-Wei Lin, W. C. Chen(2013). Hydrogenation of Silicon Oxide Film by Diluted Plasma. IEDMS 2013（頁 1-69）. R.O.C.
  • 23. C. W. Lin, Y. T. Tsai(2013). Improved Carrier Extraction of Solar Cell Using Transparent Current Spreading Layer. Int. Proc TACT（頁 C-P-517016）. R.O.C.
  • 24. C. W. Lin, P. C. Ho, S. J. Chang, W. W. Chen(2013). Nitridation of Zinc Oxide Film by Pulse Mode Rapid Thermal Annealing. Int. Proc SSDM（頁 PS-8-10）. Japan.
  • 25. C. W. Lin, W. W. Chen(2013). Two Stages Oxidation of Sputtering Deposited Hafnium. Int. Proc ISSP（頁 1-17）. Japan.
  • 26. Chiung-Wei Lin, Yi-Liang Chen(2013). Improving a-Si/c-Si Heterojunction Using Micro-Hydrogenation. Int. Proc. ISPlasma（頁 P2023A）. Japan.
  • 27. Chiung-Wei Lin, Po-Chi Ho, Bo-Sheng Zheng(2012). Effect of In-situ Doped Oxygen on the Electrical Properties of Sputtering Deposited Zinc Oxide Films. Int. Proc. EDMS 2012（頁 CP-21）. Japan.
  • 28. Chiung-Wei Lin, Shih-Hao Yang, Cheng-Yen Li(2012). Ionic Nucleated Crystallized Silicon Thin-Film Transistor Fabricated at 130 oC. Int. Proc. ThinFilms2012（頁 ODF-2214）. Singapore.
  • 29. Chiung-Wei Lin, Cheng-Chieh Juan(2012). Less Reflective Sub-Wavelength Structure Formed on Textured Surface Using Nanosphere Mask. Int. Proc. ISPlasma（頁 P1063C）. Japan.
  • 30. Chiung-Wei Lin, Yi-Liang Chen, Yeong-Shyang Lee(2011). Fabrication of ZnO/Si Heterojunction Structure. International Photonics Conference 2011 (IPC2011)（頁 PI-FR-23）. R.O.C.
  • 31. Chiung-Wei Lin, Cheng-Yen Li(2011). Fast Deposition of Low Temperature Crystallized Silicon Films by Hybrid Nucleation Process. Int. Proc. DPS 2011（頁 2-4）. Japan.
  • 32. Chiung-Wei Lin, Wei-Jyun Chen, Po-Chi Ho(2011). Low Thermal Budget Polycrystalline Silicon Thin Film Transistors. Int. Proc. EDMS 2011（頁 P-A-2）. R.O.C.
  • 33. Chiung-Wei Lin, Yi-Liang Chen(2011). New transparent oxide semiconductor/silicon double heterojunction solar cell. Int. Proc. TACT 2011（頁 A-058）. R.O.C.
  • 34. Chiung-Wei Lin, Yao-Chan Tsai, Yi-Liang Chen(2011). Improved Microcrystalline Silicon and Gate Insulator Interface with a Pad/Buffer Structure. Int. Proc. TACT 2011（頁 C-115）. R.O.C.
  • 35. Chiung-Wei Lin, Yi-Liang Chen(2011). Hydrogen and Argon Mixtures Plasma Treatment for Improving Intrinsic Layer for Heterojunction Solar Cells. Int. Proc ISSP（頁 8）. Japan.
  • 36. Chiung-Wei Lin, Shih-Hao Yang, Wen-Wei Chen, Shi-Jay Chang, Han-Sheng Chang, Po-Chie Ho, Yeong-Shyang Lee(2011). Energetic Nucleation for Low Temperature Crystallized Silicon Film. Int. Proc ISSP（頁 PI P-2）. Japan.
  • 37. C. W. Lin, M. S. Yang, Y. S. Lee(2011). Plasma Nitridation of Hydrogenated Silicon Nitride Film. Int. Proc ISPlasma（頁 P4-027A）. Japan.
  • 38. C. W. Lin, Y. L. Chen(2011). Reducing the Mismatch between Zinc Oxide and Silicon by Atomic Plasma Treatment. Int. Proc AVS-IPW（頁 E008）. R.O.C.
  • 39. C. W. Lin, P. C. Ho, C. F. Lee(2010). The Correlation between Gate/Drain Overlap and Instability of uc-Si/a-Si Thin-Film Transistor. Int. Proc OPT（頁 E008）. R.O.C.
  • 40. C. W. Lin, Y. L. Chen, W. M. Su(2010). The Role Transparent Conducting Oxide Film Plays on Reducing Parasitic Series Resistance of Silicon Solar Cells. Int. Proc IEDMS（頁 P-A-2）. United States of America.
  • 41. Chiung-Wei Lin, Yi-Liang Chen, Shu-Jheng Lin, Chi-Neng Mo(2009). The Fabrication of Thin-Film Transistors by Using Room Temperature Sputtering Deposited Aluminum-doped Zinc Oxide Film. 2009 International Display and Manufacturing Conference(IDMC)（頁 Wed-P1-09）. R.O.C.
  • 42. Chiung-Wei Lin, Yao-Chang Tsai, Yi-Liang Chen, Chi-Neng Mo(2009). The Effect of Helium Gas on Microcrystalline Silicon Thin Film Transistors. 2009 International Display and Manufacturing Conference (IDMC)（頁 1-17）. R.O.C.
  • 43. Chiung-Wei Lin, Yi-Liang Chen, Wei-Ming Su(2008). Radio-Frequency Sputter Deposited Current-Recovering Layer for Solar Cells. Int. Proc IEDMS（頁 28-29）. R.O.C.
  • 44. C. W. Lin, Y.L. Chen, C.C. Chang, Y.S. Lee(2007). Ion Controlled Nucleation for Silicon Crystallization. Int. Proc IEDMS（頁 PD-023）. R.O.C.
  • 45. Y.S. Lee, C. W. Lin, C.C. Chang, C.Y. Hou, K.F. Huang, Y.H. Peng, C.H. Chen, J.K. Chang(2007). Deposition of Porous-Free Microcrystalline Silicon Film for TFT Application in Large-Size AMLCDs. Int. Proc. IDW, 2007（頁 AMDp-35）. Japan.
  • 46. Yeong-Shyang Lee, Chih-Hsien Chen, Chiung-Wei Lin, Ya-Hui Peng, Han-Tang Chou, Chan-Ching Chang(2007). Influence of Gate Dielectric Interface Treatment on the Performance of Amorphous Silicon Thin-Film Transistors for AMLCDs. Int. Proc. IDMC, 2007（頁 1-3）. Japan.
  • 47. Yeong-Shyang LeeU, Feng-Yuan Gan, Chiung-Wei Lin, Ching-Chieh Shih, Tsung-Yi Hsu, Jun-Kai Chang(2006). The Effect of Surface Plasma Treatment for n+ on Photocurrent Reduction in a-Si:H TFTs for AMLCDs. 2006 Information Display Workshop（頁 17）. R.O.C.
  • 48. Chiung-Wei Lin, Chien-Feng Lee, Yeong-Shyang Lee, Young-Hui Yeh(2006). High-Reliability Microcrystalline Silicon Thin Film Transistors. 2006 International Electron Devices and Materials Symposia（頁 PD003）. R.O.C.
  • 49. Chiung-Wei Lin, Yi-Liang Chen(2006). Metal Plate-Assisted Crystallization for Amorphous Silicon Films. 2006 International Electron Devices and Materials Symposia（頁 PD042）. R.O.C.
  • 50. Yeong-Shyang Lee, Jun-Kai Chang, Chiung-Wei Lin, Chien-Chien Tsai, Kuo-Lung Fang, Hun-Tu Lin(2006). Effects of Stress Mismatch on the Electrical Characteristics of Amorphous Silicon TFTs for Active-Matrix LCDs. IMID/IDMC 2006. Japan.
  • 51. Chiung-Wei Lin, Yi-Liang Chen, Sheng-Chi Lee(2005). Highly Uniform Poly-Si Film Obtained by Energy-Assisted Agent. 2005 international symposium on point defect and nonstoichiometry（頁 2-74）. R.O.C.
  • 52. Chiung-Wei Lin, Sheng-Chi Lee, Yi-Liang Chen, De-Hua Deng(2005). A Metal Mediated Crystallization of Amorphous Silicon Film by Rapid Thermal Annealing. 2005 international symposium on point defect and nonstoichiometry（頁 2-57）. R.O.C.
  • 53. Chiung-Wei Lin, Pao-An Chang(2005). Large Grain Crystallization of Germanium Doped Silicon Film by Infrared Rapid Thermal Annealing. 2005 international symposium on point defect and nonstoichiometry（頁 2-40）. R.O.C.
  • 54. Chiung-Wei Lin, Chein-Fu Teng, Yi-Liang Chen(2005). Effect of In-Grain Porous Silicon Structure on Photovoltaic Device. 2005 international symposium on point defect and nonstoichiometry. R.O.C.
  • 55. Chiung-Wei Lin, C.C.Chang, Chih-Chao Chang, Y.S.Lee, Y.H.Yeh(2005). High drivability μc-Si TFT device with a compound channel layer structure. 2005 international symposium on point defect and nonstoichiometry（頁 2-3）. R.O.C.
  • 56. C. W. Lin, C.K. Kang, S. C. Lee, Y.S. Lee, C.Y. Chang(2005). Polycrystalline Silicon Film formed on Plastic Substrate by Rapid Thermal Crystallization Technology. Int. Proc. IDMC（頁 Wed-P3-09）. R.O.C.
  • 57. C. W. Lin, C.K. Kang, C.F. Deng, S. C. Lee(2004). Excimer Laser Crystallized Polycrystalline Silicon on Plastic Substrate. Int. Proc. ICA, 2004（頁 O-065）. United States of America.
  • 58. C. W. Lin, S. C. Lee, C.K. Kang(2004). The Study on the Crystallization of Semiconductor Film by Rapid Thermal Annealing Process. Int. Proc. ICA, 2004,（頁 O-064）. United States of America.
  • 59. Y. H. Yeh, N.H. Kung, C.L. Chen, Y.F. Wu, C.C. Chen, T.H. Chen, C.R. Chen, C.W. Lin(2002). 3.8-inch Multi-Color Active-Matrix OLED/PLED with Highly Smooth Low Temperature p-ITO Surface Morphology. Int. Proc. Eurodisplay 2002.（頁 29）. United States of America.
  • 60. D.Z. Peng, H.W. Zan, P.S. Shih, T.C. Chang, C.W. Lin, C.Y. Chang(2002). Comparison of Poly-Si Films Deposited by UHVCVD and LPCVD and Its Application for Thin Film Transistors. Int. Proc. 7th EUROPEAN VACUUN CONFERENCE,. United Kingdom.
  • 61. D.Z. Peng, P.S. Shih, H.W. Zan, C.Y. Chang, T.C. Chang, C.W. Lin(2002). A Novel Self-Aligned SiGe Elevated S/D Polycrystalline-Silicon Thin-Film Transistor. Int. Proc. SID, 2002（頁 56）. United States of America.
  • 62. C.Y. Chang, C.W. Lin, H.Y. Lin(1996). High Performance Low Temperature Poly-a-Si Thin Film Transistor for Active Matrix Liquid Crystal Display. Int. Proc. EDMS, 1996（頁 223）. R.O.C.
  • 63. C.W. Lin, C.Y. Chang(1996). A Novel Vertical Offset Thin-Film Transistor with High Performance. Int. Proc AM-LCD’96,（頁 253）. R.O.C.
  • 64. C.Y. Chang, S.W. Hsieh, C.W. Lin, Y.S. Lee(1994). The Influence of Nitrogen, Helium, Hydrogen, or Argon Dilution on Plasma-Enhanced Chemical Vapor Deposited a-SiNx. Int. Proc. EDMS, 1994（頁 158）. R.O.C.

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